applicationsl low voltage high-speed switching. absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions bv dss drain-source breakdown v olta g e 60 v i d =250 a ,v gs =0v i dss zero gate voltage drain current 1 a v ds = 60v v gs =0 i gss gate ?source leakage current 100 na v gs = 20v , v ds =0v v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d =250 a r ds(on) staticdrain-source on-resistance 0.018 0.023 ? v gs =10v, i d =25a ciss input capacitance 880 1140 pf coss output capacitance 430 560 pf v ds =25v, v gs =0,f=1 mhz crss reverse transfer capacitance 110 140 pf t d(on) turn - on delay time 60 130 ns tr rise time 185 380 ns t d(off) turn - off delay time 75 160 ns t f fall time 60 130 ns v dd =30v, i d =25a r g = 50 * qg total gate charge 39 45 nc v ds =48v qgs gate?source charge 9.5 nc v gs =10v qgd gate?drain charge 13 nc i d =50a* is continuous source current 50 a v sd diode forward voltage 1.5 v i s =50a , v gs =0 rth j-c thermal resistance junction-to-case 1.15 /w *pulse test pulse width 300 s duty cycle 2% t stg storage temperature - 55~175 t j operating junction temperature 150 p d allowable power dissipation t c =25 130 w v dss drain-source voltage 60 v v gss gate-source voltage 2 0 v i d drain current t c =25 50 a 50a 60v n channel mosfet
50a 60v n channel mosfet
50a 60v n channel mosfet
50a 60v n channel mosfet
50a 60v n channel mosfet
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